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类别是'category.MOSFETs 晶体管阵列' (10000)
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对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 质量 | 晶体管元件材料 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 电阻 | 端子表面处理 | 附加功能 | 电压 - 额定直流 | 最大功率耗散 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | Reach合规守则 | 额定电流 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | 参考标准 | JESD-30代码 | 资历状况 | 配置 | 通道数量 | 元素配置 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 功率 - 最大 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)（最大值） | 无卤素 | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | 极性/通道类型 | 下降时间（典型值） | 连续放电电流(ID) | 阈值电压 | 栅极至源极电压(Vgs) | 最大双电源电压 | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 双电源电压 | DS 击穿电压-最小值 | 雪崩能量等级（Eas） | 场效应管技术 | 最大耗散功率(Abs) | 最大结点温度（Tj） | 场效应管特性 | 栅源电压 | 反馈上限-最大值 (Crss) | 高度 | 长度 | 宽度 | 器件厚度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||
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 | DMC6040SSD-13 | Diodes Incorporated | 数据表 | 50000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 23 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 73.992255mg | SILICON | 5.1A 3.1A | 2 | 58.7 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2014 | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | HIGH RELIABILITY | 1.24W | DUAL | 鸥翼 | 260 | 30 | AEC-Q101 | 2 | 增强型MOSFET | 3.7 ns | N and P-Channel | SWITCHING | 40m Ω @ 8A, 10V | 3V @ 250μA | 1130pF @ 15V | 20.8nC @ 10V | 6.3ns | 60V | N-CHANNEL AND P-CHANNEL | 26.1 ns | 3.1A | 20V | 5.1A | 0.04Ohm | -60V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||
 | FDMS7620S | ON Semiconductor | 数据表 | 18000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | ACTIVE (Last Updated: 6 days ago) | 表面贴装 | 表面贴装 | 8-PowerWDFN | 8 | 211mg | SILICON | 10.1A 12.4A | 2 | 17.4 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | PowerTrench® | e4 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | 2.5W | R-PDSO-N6 | 增强型MOSFET | 2.2W | 排水源头 | 6.6 ns | 1W | 2 N-Channel (Dual) | SWITCHING | 20m Ω @ 10.1A, 10V | 3V @ 250μA | 608pF @ 15V | 11nC @ 10V | 1.8ns | 1.5 ns | 12.4A | 2.2V | 20V | 0.0101A | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 31 pF | 750μm | 5mm | 6mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||
 | FDS8978 | ON Semiconductor | 数据表 | 250000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | ACTIVE (Last Updated: 1 week ago) | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 187mg | 2 | 48 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2001 | PowerTrench® | 活跃 | 1 (Unlimited) | 18MOhm | 1.6W | Dual | 1.6W | 7 ns | 2 N-Channel (Dual) | 18m Ω @ 7.5A, 10V | 2.5V @ 250μA | 1270pF @ 15V | 26nC @ 10V | 37ns | 30V | 37 ns | 7.5A | 2.5V | 20V | 30V | 逻辑电平门 | 1.5mm | 5mm | 4mm | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||
| FDS8928A | ON Semiconductor | 数据表 | 3000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 8 Weeks | ACTIVE (Last Updated: 6 days ago) | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 230.4mg | SILICON | 5.5A 4A | 2 | 260 ns | -55°C~150°C TJ | Tape & Reel (TR) | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 30MOhm | 2W | DUAL | 鸥翼 | 5.5A | 增强型MOSFET | 2W | 900mW | N and P-Channel | SWITCHING | 30m Ω @ 5.5A, 4.5V | 1V @ 250μA | 900pF @ 10V | 28nC @ 4.5V | 23ns | 30V 20V | N-CHANNEL AND P-CHANNEL | 90 ns | 5.5A | 670mV | 8V | -20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 670 mV | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||
 | NTHC5513T1G | ON Semiconductor | 数据表 | 3 In Stock | - | 最小起订量: 1 最小包装量: 1 | 2 Weeks | ACTIVE (Last Updated: 1 week ago) | 表面贴装 | 8-SMD, Flat Lead | YES | 8 | 4.535924g | SILICON | 2.9A 2.2A | 2 | 33 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2005 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Tin (Sn) | 20V | 1.1W | C 弯管 | 260 | 3.1A | 40 | NTHC5513 | 8 | Dual | 增强型MOSFET | 1.1W | 7 ns | N and P-Channel | SWITCHING | 80m Ω @ 2.9A, 4.5V | 1.2V @ 250μA | 180pF @ 10V | 4nC @ 4.5V | 13ns | N-CHANNEL AND P-CHANNEL | 3.9A | 600mV | 12V | -20V | 10A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 600 mV | 1.1mm | 3.1mm | 1.7mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||
| FDS9953A | ON Semiconductor | 数据表 | 3000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | ACTIVE (Last Updated: 1 week ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 230.4mg | SILICON | 2.9A | 2 | 11 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2001 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 130MOhm | Tin (Sn) | -30V | 2W | 鸥翼 | -2.9A | Dual | 增强型MOSFET | 2W | 4.5 ns | 900mW | 2 P-Channel (Dual) | SWITCHING | 130m Ω @ 1A, 10V | 3V @ 250μA | 185pF @ 15V | 3.5nC @ 10V | 13ns | 30V | 2 ns | 2.9mA | -1.8V | 25V | -30V | 10A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.8 V | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||
 | IPG16N10S461ATMA1 | Infineon Technologies | 数据表 | 14 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 8-PowerVDFN | 8 | SILICON | 2 | 5 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2011 | Automotive, AEC-Q101, OptiMOS™ | e3 | 活跃 | 1 (Unlimited) | 6 | EAR99 | Tin (Sn) | 29W | FLAT | not_compliant | 8 | R-PDSO-F6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | 3 ns | 29W | 2 N-Channel (Dual) | 61m Ω @ 16A, 10V | 3.5V @ 9μA | 无卤素 | 490pF @ 25V | 7nC @ 10V | 1ns | 16A | 20V | 100V | 0.061Ohm | 64A | 33 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | 20 pF | ROHS3 Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||
 | NTJD4105CT2G | ON Semiconductor | 数据表 | 87868 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 8 Weeks | ACTIVE (Last Updated: 6 days ago) | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | YES | 6 | SILICON | 630mA 775mA | 2 | 50 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 220mOhm | Tin (Sn) | 270mW | 鸥翼 | 260 | 630mA | 40 | NTJD4105C | 6 | Dual | 增强型MOSFET | 270mW | N and P-Channel | SWITCHING | 375m Ω @ 630mA, 4.5V | 1.5V @ 250μA | 46pF @ 20V | 3nC @ 4.5V | 23ns | 20V 8V | N-CHANNEL AND P-CHANNEL | 36 ns | 775mA | 8V | 1.1A | -8V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 5 pF | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||
 | NVMFD5C462NLT1G | ON Semiconductor | 数据表 | 3000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 48 Weeks | ACTIVE (Last Updated: 3 days ago) | 表面贴装 | 8-PowerTDFN | YES | SILICON | 18A Ta 84A Tc | 2 | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | Tin (Sn) | FLAT | not_compliant | R-PDSO-F6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | 3W Ta 50W Tc | 2 N-Channel (Dual) | 4.7m Ω @ 10A, 10V | 2.2V @ 40μA | 1300pF @ 25V | 11nC @ 4.5V | 40V | 0.0077Ohm | 311A | 40V | 174 mJ | METAL-OXIDE SEMICONDUCTOR | 50W | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||
 | BSO211PHXUMA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 540.001716mg | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | OptiMOS™ | e3 | yes | Obsolete | 3 (168 Hours) | 8 | EAR99 | Tin (Sn) | 逻辑电平兼容 | 1.6W | 鸥翼 | 未说明 | 未说明 | BSO211 | 8 | 不合格 | 增强型MOSFET | 1.6W | 2 P-Channel (Dual) | 67m Ω @ 4.6A, 4.5V | 1.2V @ 25μA | 无卤素 | 1095pF @ 15V | 10nC @ 4.5V | 13ns | 20V | 4A | 12V | -20V | 0.067Ohm | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||
 | ECH8660-TL-H | ON Semiconductor | 数据表 | 1763 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 33 Weeks | ACTIVE (Last Updated: 1 day ago) | 表面贴装 | 8-SMD, Flat Lead | 8 | 45 ns | 150°C TJ | Tape & Reel (TR) | 2010 | e6 | yes | 活跃 | 1 (Unlimited) | EAR99 | Tin/Bismuth (Sn/Bi) | 1.5W | 8 | Dual | N and P-Channel | 59m Ω @ 2A, 10V | 无卤素 | 240pF @ 10V | 4.4nC @ 10V | 30V | 4.5A | 20V | 逻辑电平门 | 900μm | 2.9mm | 2.3mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IRFH7911TRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 39 Weeks | 表面贴装 | 表面贴装 | 18-PowerVQFN | 18 | SILICON | 13A 28A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | HEXFET® | e3 | 不用于新设计 | 2 (1 Year) | 6 | EAR99 | 8.6MOhm | Matte Tin (Sn) | HIGH RELIABILITY | 3.4W | QUAD | 无铅 | 260 | 30 | IRFH7911PBF | R-PQFP-N6 | 不合格 | Dual | 增强型MOSFET | 2.4W | 排水源头 | 2.4W 3.4W | 2 N-Channel (Dual) | SWITCHING | 8.6m Ω @ 12A, 10V | 2.35V @ 25μA | 1060pF @ 15V | 12nC @ 4.5V | 13A | 20V | 30V | 100A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 2.35 V | 939.8μm | 5.9944mm | 5mm | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||
| FDS9933A | ON Semiconductor | 数据表 | 649 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | ACTIVE (Last Updated: 1 week ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 187mg | SILICON | 2 | 31 ns | -55°C~150°C TJ | Tape & Reel (TR) | 1998 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 75MOhm | Tin (Sn) | -20V | 2W | 鸥翼 | -3.8A | Dual | 增强型MOSFET | 2W | 6 ns | 900mW | 2 P-Channel (Dual) | SWITCHING | 75m Ω @ 3.8A, 4.5V | 1.5V @ 250μA | 600pF @ 10V | 10nC @ 4.5V | 9ns | 20V | 28 ns | 3.8A | -800mV | 8V | -20V | -20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | -800 mV | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||
| NVMFD5C466NLT1G | ON Semiconductor | 数据表 | 38000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 48 Weeks | ACTIVE (Last Updated: 3 days ago) | 表面贴装 | 8-PowerTDFN | 14A Ta 52A Tc | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101 | e3 | yes | 活跃 | 1 (Unlimited) | Tin (Sn) | 未说明 | not_compliant | 未说明 | 3W Ta 40W Tc | 2 N-Channel (Dual) | 7.4m Ω @ 10A, 10V | 2.2V @ 30μA | 997pF @ 25V | 7nC @ 4.5V | 40V | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BSL316CH6327XTSA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | SILICON | 1.4A 1.5A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101, OptiMOS™ | e3 | 活跃 | 1 (Unlimited) | 6 | EAR99 | Tin (Sn) | 雪崩 额定 | 500mW | DUAL | 鸥翼 | 未说明 | 未说明 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | N and P-Channel Complementary | 160m Ω @ 1.4A, 10V | 2V @ 3.7μA | 无卤素 | 282pF @ 15V | 0.6nC @ 5V | 30V | N-CHANNEL AND P-CHANNEL | 1.5A | 1.6V | 20V | -30V | 1.4A | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate, 4.5V Drive | 7 pF | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||
 | FDC6304P | ON Semiconductor | 数据表 | 300000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 10 Weeks | ACTIVE (Last Updated: 1 day ago) | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | 36mg | SILICON | 460mA | 2 | 55 ns | -55°C~150°C TJ | Tape & Reel (TR) | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 1.1Ohm | Tin (Sn) | -25V | 700mW | 鸥翼 | -460mA | Dual | 增强型MOSFET | 900mW | 7 ns | 2 P-Channel (Dual) | SWITCHING | 1.1 Ω @ 500mA, 4.5V | 1.5V @ 250μA | 62pF @ 10V | 1.5nC @ 4.5V | 8ns | 25V | 8 ns | -460mA | -860mV | 8V | -25V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||
 | IRF7910PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | 16 ns | -55°C~150°C TJ | Tube | 2004 | HEXFET® | Discontinued | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 12V | 2W | 鸥翼 | 10A | IRF7910PBF | Dual | 增强型MOSFET | 2W | 9.4 ns | 2 N-Channel (Dual) | SWITCHING | 15m Ω @ 8A, 4.5V | 2V @ 250μA | 1730pF @ 6V | 26nC @ 4.5V | 22ns | 6.3 ns | 10A | 2V | 12V | 0.015Ohm | 12V | 12V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 2 V | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||
 | CSD88539ND | Texas Instruments | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | ACTIVE (Last Updated: 4 days ago) | Gold | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 540.001716mg | SILICON | 2 | 5 ns | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | e4 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 雪崩 额定 | 2.1W | 鸥翼 | 260 | CSD88539 | Dual | 增强型MOSFET | 2.1W | 6 ns | 2 N-Channel (Dual) | SWITCHING | 28m Ω @ 5A, 10V | 3.6V @ 250μA | 741pF @ 30V | 9.4nC @ 10V | 9ns | 60V | 4 ns | 15A | 3V | 20V | 6.3A | 0.034Ohm | 60V | 46A | METAL-OXIDE SEMICONDUCTOR | Standard | 1.75mm | 4.9mm | 3.91mm | 1.58mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||
| AUIRF7343QTR | Infineon Technologies | 数据表 | 4000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 26 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 4.7A 3.4A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | HEXFET® | e3 | 不用于新设计 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 2W | 鸥翼 | Dual | 增强型MOSFET | 2W | N and P-Channel | SWITCHING | 50m Ω @ 4.7A, 10V | 1V @ 250μA | 740pF @ 25V | 36nC @ 10V | N-CHANNEL AND P-CHANNEL | 3.4A | 1V | 20V | 4.7A | 0.05Ohm | 55V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1 V | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||
 | BSC0921NDIATMA1 | Infineon Technologies | 数据表 | 100 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 18 Weeks | Tin | 表面贴装 | 表面贴装 | 8-PowerTDFN | 8 | 17A 31A | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | OptiMOS™ | e3 | no | 活跃 | 1 (Unlimited) | EAR99 | 1W | 未说明 | not_compliant | 未说明 | 2 N-Channel (Dual) Asymmetrical | 5m Ω @ 20A, 10V | 2V @ 250μA | 1025pF @ 15V | 8.9nC @ 4.5V | 30V | 31A | 20V | Logic Level Gate, 4.5V Drive | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BSS138PS,115 | Nexperia USA Inc. | 数据表 | 3474 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 4 Weeks | Tin | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | YES | 6 | SILICON | 2 | 9 ns | 150°C TJ | Tape & Reel (TR) | 2010 | Automotive, AEC-Q101, TrenchMOS™ | e3 | 活跃 | 1 (Unlimited) | 6 | EAR99 | 1.6Ohm | 逻辑电平兼容 | 420mW | 鸥翼 | 260 | 30 | 6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 280mW | 2 ns | 420mW | 2 N-Channel (Dual) | SWITCHING | 1.6 Ω @ 300mA, 10V | 1.5V @ 250μA | 50pF @ 10V | 0.8nC @ 4.5V | 3ns | 4 ns | 320mA | 1.2V | 20V | 60V | 0.32A | 60V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||
 | DMC1028UFDB-7 | Diodes Incorporated | 数据表 | 713 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 15 Weeks | 表面贴装 | 表面贴装 | 6-UDFN Exposed Pad | SILICON | 6A 3.4A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2015 | e4 | 活跃 | 1 (Unlimited) | 6 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.36W | DUAL | 无铅 | 未说明 | 未说明 | S-PDSO-N6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | N and P-Channel | SWITCHING | 25m Ω @ 5.2A, 4.5V | 1V @ 250μA | 787pF @ 6V | 18.5nC @ 8V | 12V 20V | N-CHANNEL AND P-CHANNEL | 3.4A | 6A | 0.025Ohm | 12V | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||
 | IPG20N04S412AATMA1 | Infineon Technologies | 数据表 | 439 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | Surface Mount, Wettable Flank | 8-PowerVDFN | 8 | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101, OptiMOS™ | e3 | 活跃 | 1 (Unlimited) | EAR99 | Tin (Sn) | 41W | 未说明 | not_compliant | 未说明 | 2 N-Channel (Dual) | 12.2m Ω @ 17A, 10V | 4V @ 15μA | 无卤素 | 1470pF @ 25V | 18nC @ 10V | 40V | 20A | 40V | Standard | ROHS3 Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD5C672NLT1G | ON Semiconductor | 数据表 | 26000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 48 Weeks | ACTIVE (Last Updated: 3 days ago) | 表面贴装 | 8-PowerTDFN | YES | SILICON | 12A Ta 49A Tc | 2 | 22 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | Tin (Sn) | FLAT | 260 | not_compliant | 30 | R-PDSO-F6 | 2 | 增强型MOSFET | 3.1W | DRAIN | 11 ns | 3.1W Ta 45W Tc | 2 N-Channel (Dual) | 11.9m Ω @ 10A, 10V | 2.2V @ 30μA | 793pF @ 25V | 5.7nC @ 4.5V | 11A | 20V | 0.0168Ohm | 60V | 146A | 66 mJ | METAL-OXIDE SEMICONDUCTOR | 175°C | Standard | 1.1mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||
| IPG20N06S415ATMA2 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 8-PowerVDFN | 8 | SILICON | 2 | 17 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2005 | Automotive, AEC-Q101, OptiMOS™ | yes | 活跃 | 1 (Unlimited) | 8 | 50W | FLAT | 未说明 | not_compliant | 未说明 | Dual | 增强型MOSFET | 50W | 12 ns | 2 N-Channel (Dual) | 15.5m Ω @ 17A, 10V | 4V @ 20μA | 无卤素 | 2260pF @ 25V | 29nC @ 10V | 2ns | 9 ns | 20A | 20V | 60V | 0.0155Ohm | 60V | 90 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | 1mm | 5.15mm | 6.15mm | ROHS3 Compliant |
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分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
8.697776
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分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays